PART |
Description |
Maker |
AT49BV002A AT49BV002AN AT49V002ANT AT49V002AT AT49 |
AT49BV002A(N)(T) [Updated 8/03. 19 Pages] 256K x 8 (2M bit). 2.7-Volt Read and 2.7-Vold Write. Top or Bottom Boot Parametric Block Flash 256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Top Boot Parametric Block Flash 256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Bottom Boot Parametric Block Flash
|
Atmel
|
AT29C1024NBSP AT29C1024 |
1M bit, 5-Volt Read and 5-Volt Write Flash From old datasheet system
|
Atmel Corp
|
AT49F4096ANBSP AT49F4096A-70CC AT49F4096A-90CC |
EEPROM 4M bit, 5-Volt Read and 5-Volt Write Flash
|
Atmel Corp
|
AT49LV4096A AT49BV4096A AT49LV4096A-70C5I |
256K X 16 FLASH 2.7V PROM, 70 ns, PBGA48 4M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom Boot 4M bit, 3.0-Volt Read and 3.0-Volt Write, Byte-Write Flash, Bottom Boot
|
ATMEL CORP
|
AT49BV8011 AT49BV8011-12CI AT49LV8011 AT49LV8011-9 |
8M bit. 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash. Bottom Boot 800万位2.7伏读取和2.7伏字节写扇区闪存。底部启 x8/x16 Flash EEPROM x8/x16闪存EEPROM 8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
|
3M Company Atmel, Corp. AMIC Technology, Corp. Advanced Micro Devices, Inc. ATMEL[ATMEL Corporation]
|
AT49LV321 AT49BV320 AT49BV321 AT49LV320 |
32-megabit (2M x 16/4M x 8) 3-volt Only Flash Memory 32M bit. 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash. Single Plane. Bottom Boot 32M bit. 3.0-Volt Read and 3.0-Volt Byte-Write Sectored Flash. Single Plane. Bottom Boot
|
ATMEL Corporation
|
S29JL064H S29JL064H70TAI000 S29JL064H70TAI002 S29J |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
|
SPANSION[SPANSION]
|
AM29DL640H60EI AM29DL640H55EI D640H90VI AM29DL640H |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
|
SPANSION[SPANSION]
|
X28HC64SIZ-12 X28HC64SIZ-70 X28HC64J-12 X28HC64JIZ |
64K, 8K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 32-PLCC T&R 8K X 8 EEPROM 5V, 90 ns, PQCC32 64K, 8K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-SOIC T&R 8K X 8 EEPROM 5V, 120 ns, PDSO28 64K, 8K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: 0°C to 70°C; Package: 28-PDIP 8K X 8 EEPROM 5V, 90 ns, PDIP28 64K, 8K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-SOIC 8K X 8 EEPROM 5V, 70 ns, PDSO28
|
Intersil Corporation http:// Intersil, Corp.
|
AM29PDL128G80 AM29PDL128G90 AM29PDL128G70R |
128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
|
Advanced Micro Devices
|
AM29BDS128HD9VFI AM29BDS64HD8VKI AM29BDS128HD8VKI |
128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 12864兆位米或4个M x 16位)的CMOS 1.8伏,只有同时写,突发模式闪存 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 8M X 16 FLASH 1.8V PROM, 50 ns, PBGA80 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 1284兆位米或4个M x 16位)的CMOS 1.8伏,只有同时写,突发模式闪存
|
Spansion Inc. Spansion, Inc. SPANSION LLC
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